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| NTE218 Silicon PNP Transistor Audio Power Output Description: The NTE218 is ideal for use as a driver, switch and medium-power amplifier applications. This device features: Features: D Low Saturation Voltage - 0.6VCE(sat) @ IC = 1A D High Gain Characteristics - hFE @ IC = 250mA: 30-100 D Excellent Safe Area Limits Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.143W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Note 1 Pulse Test: Pulse Width 300s, Duty Cycle 2.0%. Electrical Characteristics: (TC = +25C unless otherwise sepcified) Parameter OFF Characteristics Colector-Emitter Sustaining Voltage Emitter Cutoff Current Collector Cutoff Current VCEO(sus) IC = 100mA, IB = 0, Note 1 IEBO ICEX ICEO ICBO VEB = 7V VCE = 80V, VBE(off) = 1.5V VCE = 60V, VBE(off) = 1.5V, TC = +150C VCE = 60V, IB = 0 VCB = 80V, IE = 0 80 - - - - 1 - - - - - - - 0.5 100 1.0 1.0 100 V mA A mA mA A Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont'd): (TC = +25C unless otherwise sepcified) Parameter ON Characteristics (Note 1) DC Current Gain hFE VCE = 1V, IC = 100mA VCE = 1V, IC = 250mA VCE = 1V, IC = 500mA VCE = 1V, IC = 1A Collector-Emitter Saturation Voltage Base-Emitter Voltage Transient Characteristics Current Gain Bandwidth Product Common Base Output Capacitance Small-Signal Current Gain fT Cob hfe VCE = 1V, IC = 250mA, f = 1MHz VCE = 10V, IC = 0, f = 100kHz VCE = 10V, IC = 50mA, f = 1kHz 3 - 25 - - - - 100 - MHz pF VCE(sat) VBE IC = 1A, IB = 125mA VCE = 1V, IC = 250mA 40 30 20 10 - - - - - - - - - 100 - - 0.6 1.0 V V Symbol Test Conditions Min Typ Max Unit Note 1 Pulse Test: Pulse Width 300s, Duty Cycle 2.0%. .485 (12.3) Dia .062 (1.57) .295 (7.5) .031 (0.78) Dia .360 (9.14) Min Base .960 (24.3) .580 (14.7) .147 (3.75) Dia (2 Places) .200 (5.08) .145 (3.7) R Max Collector/Case Emitter |
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